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STH270N4F3-2 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using STripFET™ F3 technology.

It is designed to minimize on-resistance and gate charge to provide superior switching performance.

 6 

Table 1.

Features

  • TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram ' 7$% Order codes STH270N4F3-2 VDS 40 V RDS(on) max ID 1.7 mΩ 180 A.
  • Conduction losses reduced.
  • Low profile, very low parasitic inductance, high current package.

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Full PDF Text Transcription

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STH270N4F3-2 N-channel 40 V, 1.4 mΩ typ., 180 A STripFET™ F3 Power MOSFET in H2PAK-2 package Datasheet − production data Features TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram ' 7$% Order codes STH270N4F3-2 VDS 40 V RDS(on) max ID 1.7 mΩ 180 A • Conduction losses reduced • Low profile, very low parasitic inductance, high current package Applications • Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. *  6  *,3')65 Order code STH270N4F3-2 Table 1. Device summary Marking Package 270N4F3 H2PAK-2 Packaging Tape and reel May 2015 This is information on a product in full production.
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