Datasheet4U Logo Datasheet4U.com

STH240N75F3-6 - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the STH240N75F3-6, a member of the STH240N75F3-2 N-CHANNEL POWER MOSFET family.

Description

These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.

Figure 1.

Features

  • Order code STH240N75F3-2 STH240N75F3-6 VDSS 75 V RDS(on) max. ID < 3.0 mΩ 180 A.
  • Conduction losses reduced.
  • Low profile, very low parasitic inductance.

📥 Download Datasheet

Datasheet preview – STH240N75F3-6

Datasheet Details

Part number STH240N75F3-6
Manufacturer STMicroelectronics
File Size 850.48 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STH240N75F3-6 Datasheet
Additional preview pages of the STH240N75F3-6 datasheet.

📁 Similar Datasheet

  • STH24D12 - Solid-State Relays (TELEDYNE)
  • STH24D25 - Solid-State Relays (TELEDYNE)
  • STH24D35 - Solid-State Relays (TELEDYNE)
  • STH24D50 - Solid-State Relays (TELEDYNE)
  • STH200N55F3-2 - Power MOSFETs (ST Microelectronics)
  • STH260N6F6-2 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STH1061 - NPN Plastic Power Transistor (SEMTECH ELECTRONICS)
  • STH10NA50 - N-CHANNEL Power MOS MOSFET (ST Microelectronics)
  • STH10NA50FI - N-CHANNEL Power MOS MOSFET (ST Microelectronics)
  • STH10NC60 - N-CHANNEL Power MOS MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STH240N75F3-2, STH240N75F3-6 N-channel 75 V, 2.6 mΩ typ., 180 A STripFET™ III Power MOSFET in H²PAK-2 and H²PAK-6 packages Datasheet − production data Features Order code STH240N75F3-2 STH240N75F3-6 VDSS 75 V RDS(on) max. ID < 3.0 mΩ 180 A ■ Conduction losses reduced ■ Low profile, very low parasitic inductance Applications ■ Switching application Description These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. TAB H2PAK-2 7 1 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) G(1) G(1) Table 1.
Published: |