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STH250N55F3-6 - N-channel Power MOSFET

Description

This N-channel STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance.

H2PAK-6l Figure 1.

Table 1.

Features

  • Order code STH250N55F3-6 VDSS 55 V RDS(on) max. ID Pw 2.6 mΩ 180 A(1) 300 W 1. Value limited by package.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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Datasheet Details

Part number STH250N55F3-6
Manufacturer STMicroelectronics
File Size 707.45 KB
Description N-channel Power MOSFET
Datasheet download datasheet STH250N55F3-6 Datasheet
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Full PDF Text Transcription

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STH250N55F3-6 N-channel 55 V, 2.2 mΩ, 180 A, H²PAK STripFET™ III Power MOSFET Features Order code STH250N55F3-6 VDSS 55 V RDS(on) max. ID Pw 2.6 mΩ 180 A(1) 300 W 1. Value limited by package ■ Ultra low on-resistance ■ 100% avalanche tested Application Switching applications Description This N-channel STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. H2PAK-6l Figure 1. Internal schematic diagram Table 1. Device summary Order code STH250N55F3-6 Marking 250N55F3 Package H²PAK Packaging Tape and reel October 2010 Doc ID 18059 Rev 1 1/13 www.st.com 13 Contents Contents STH250N55F3-6 1 Electrical ratings . . . . . . . . . . . . . . . . . .
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