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STGWT60H60DLFB - Trench gate field-stop IGBT

Download the STGWT60H60DLFB datasheet PDF (STGW60H60DLFB included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for trench gate field-stop igbt.

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Low VF soft recovery co-packaged diode.
  • Lead free package Figure 1. Internal schematic diagram C (2 or TAB).

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Note: The manufacturer provides a single datasheet file (STGW60H60DLFB-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2 1 Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Low VF soft recovery co-packaged diode • Lead free package Figure 1. Internal schematic diagram C (2 or TAB) Applications • Induction heating • Microwave oven • Resonant converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
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