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STGWT20V60F - IGBT

This page provides the datasheet information for the STGWT20V60F, a member of the STGFW20V60F IGBT family.

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the "V" series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Very high speed switching series.
  • Tail-less switching off.
  • Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Lead free package.

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Full PDF Text Transcription

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STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data 1 3 2 1 TO-3PF TAB 3 2 1 TO-247 TO-3P 3 2 1 Figure 1. Internal schematic diagram C (2, TAB) G (1) Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Lead free package Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
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