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STGWA75H65DFB2 - IGBT

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.

Features

  • C(2, TAB).
  • Maximum junction temperature: TJ = 175 °C.
  • Low VCE(sat) = 1.55 V(typ. ) @ IC = 75 A.
  • Very fast and soft recovery co-packaged diode.
  • Minimized tail current.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Positive VCE(sat) temperature coefficient.

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Full PDF Text Transcription

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STGWA75H65DFB2 Datasheet Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package Features C(2, TAB) • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications G(1) E(3) • Welding • Power factor correction • UPS • Solar inverters • Chargers NG1E3C2T Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.
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