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STGW60V60F - Trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.

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STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features  Maximum junction temperature: TJ = 175 °C  Tail-less switching off  VCE(sat) = 1.85 V (typ.) @ IC = 60 A  Tight parameters distribution  Safe paralleling  Low thermal resistance Applications  Photovoltaic inverters  Uninterruptible power supply  Welding  Power factor correction  Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
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