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STGP35N35LZ - IGBT

Download the STGP35N35LZ datasheet PDF. This datasheet also covers the STGB35N35LZ variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Description

This application specific IGBT utilizes the most advanced PowerMESH™ technology.

The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.

Features

  • Designed for automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGB35N35LZ-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ TAB 3 1 D²PAK TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram C (2 or TAB) G (1) RG RGE Datasheet - production data Features • Designed for automotive applications and AEC-Q101 qualified • Low threshold voltage • Low on-voltage drop • High voltage clamping feature • Logic level gate charge • ESD gate-emitter protection • Gate and gate-emitter integrated resistors Application • Automotive ignition Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.
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