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STGP30M65DF2 - Trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.

Features

  • 6 µs of short-circuit withstand time.
  • VCE(sat) = 1.55 V (typ. ) @ IC = 30 A.
  • Tight parameters distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and very fast recovery antiparallel diode.

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Full PDF Text Transcription

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STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features • 6 µs of short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.
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