Datasheet4U Logo Datasheet4U.com

STGB30V60F - Trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure.

The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 30 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STGB3NB60FD N-CHANNEL IGBT ST Microelectronics
STGB3NB60HD N-CHANNEL IGBT ST Microelectronics
STGB3NB60K IGBT ST Microelectronics
STGB3NB60KD IGBT ST Microelectronics
STGB3NB60SD N-CHANNEL IGBT ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGB30V60DF Trench gate field-stop IGBT
STGB30H60DF 30A high speed trench gate field-stop IGBT
STGB30H60DFB 600V 30A IGBT
STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT
STGB30H65DFB2 high-speed HB2 series IGBT

Full PDF Text Transcription

Click to expand full text
STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB 3 1 D2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram C (2, TAB) Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure.
Published: |