STGB30H65DFB2 Datasheet high-speed HB2 series IGBT

Manufacturer: STMicroelectronics

STGB30H65DFB2 high-speed hb2 series igbt by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STGB30H65DFB2
Manufacturer	STMicroelectronics
File Size	645.04 KB
Description	high-speed HB2 series IGBT
Datasheet	STGB30H65DFB2 Datasheet

General Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.

A very fast soft recovery diode is co-packaged in antiparallel with the IGBT.

Overview

STGB30H65DFB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package TAB 2 3 1 D²PAK C(2,.

Key Features

Maximum junction temperature : TJ = 175 °C.
Low VCE(sat) = 1.65 V (typ. ) @ IC = 30 A.
Very fast and soft recovery co-packaged diode.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient.

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