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STGB20V60DF - 600V 20A very high speed trench gate field-stop IGBT

Datasheet Summary

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Very high speed switching series 3 2 1 1 3.
  • Tail-less switching off.
  • Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance 3 TO-220 TAB D²PAK 3 2 1 1 2.
  • Very fast soft recovery antiparallel diode.
  • Lead free package TO-247 TO-3P Figure 1. Internal schematic diagram.

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Datasheet Details

Part number STGB20V60DF
Manufacturer STMicroelectronics
File Size 2.07 MB
Description 600V 20A very high speed trench gate field-stop IGBT
Datasheet download datasheet STGB20V60DF Datasheet
Additional preview pages of the STGB20V60DF datasheet.

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STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 2 1 1 3 • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance 3 TO-220 TAB D²PAK 3 2 1 1 2 • Very fast soft recovery antiparallel diode • Lead free package TO-247 TO-3P Figure 1.
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