STGB20NB32LZ-1 - IGBT

This page provides the datasheet information for the STGB20NB32LZ-1, a member of the STGB20NB32LZ IGBT family.

Datasheet Summary

Description

performances.

STMicroelectronics

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Datasheet Details

Part number	STGB20NB32LZ-1
Manufacturer	STMicroelectronics
File Size	504.15 KB
Description	IGBT
Datasheet	STGB20NB32LZ-1 Datasheet
Additional preview pages of the STGB20NB32LZ-1 datasheet.

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Full PDF Text Transcription

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STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB20NB32LZ CLAMPED < 2.0 V STGB20NB32LZ-1 CLAMPED < 2.0 V 20 A 20 A s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE t(s) s LOW ON-VOLTAGE DROP s HIGH CURRENT CAPABILITY uc s HIGH VOLTAGE CLAMPING FEATURE Prod t(s) DESCRIPTION lete uc Using the latest high voltage technology based on a d patented strip layout, STMicroelectronics has so ro designed an advanced family of IGBTs, the b P PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener - O te exhibits a very precise active clamping while the ) le gate-emitter zener supplies an ESD protection.

Published: Jan 21, 2019 |