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STG50M120F3D7 - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • 10 μs of short-circuit withstand time.
  • Low VCE(sat) = 1.7 V (typ. ) @ IC = 50 A.
  • Tight parameter distribution.
  • Positive VCE(sat) temperature coefficient.

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Full PDF Text Transcription

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STG50M120F3D7 Datasheet Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing C G Features • Maximum junction temperature: TJ = 175 °C • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient Applications E • Industrial motor control EGCD • Industrial drives • Solar inverters • Uninterruptable power supplies (UPS) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
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