Datasheet4U Logo Datasheet4U.com

STFV4N150 - N-channel Power MOSFET

General Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.

Key Features

  • Type STFV4N150 STFW4N150 (1) STP4N150 STW4N150 VDSS RDS(on) max ID 1500 V 1500 V 1500 V 1500 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF Three PhaseNeutral Filters PREMO CORPORATION
STF-xxxHV Three-Phase + Neutral Line Filters Premo
STF0402 COMMON MODE CHOKE Superworld Electronics
STF0402100YZF COMMON MODE CHOKE Superworld Electronics
STF0402151YZF COMMON MODE CHOKE Superworld Electronics

Other Datasheets by STMicroelectronics

Part Number Description
STF100N10F7 N-channel Power MOSFET
STF100N6F7 N-CHANNEL POWER MOSFET
STF10LN80K5 N-channel Power MOSFET
STF10N105K5 N-channel Power MOSFET
STF10N60DM2 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STFV4N150 - STFW4N150 STP4N150 - STW4N150 N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF Features Type STFV4N150 STFW4N150 (1) STP4N150 STW4N150 VDSS RDS(on) max ID 1500 V 1500 V 1500 V 1500 V <7Ω 4A <7Ω 4A <7Ω 4A <7Ω 4A 1. All data which refers solely to the TO-3PF package is preliminary ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF and TO-220FH plastic packages ■ Creepage distance path is 5.4 mm (typ.) for TO-3PF ■ Creepage distance path is > 4 mm for TO-220FH 3 2 1 TO-220 3 2 1 TO-247 3 2 1 TO-3PF 3 2 1 TO-220FH Figure 1. Internal schematic diagram.