STF10N105K5
Features
Order codes
STF10N105K5 STP10N105K5 STW10N105K5
VDS 1050 V
RDS(on) max.
PTOT
1.3 Ω
30 W 6 A 130 W
130 W
3 12
TO-247 Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM01476v1
- Industry’s lowest RDS(on)
- Industry’s best figure of merit (Fo M)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Table 1: Device summary Order codes Marking Package Packaging
STF10N105K5 STP10N105K5...
