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STFH10N60M2 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code STFH10N60M2 VDS at TJmax. 650 V RDS(on) max. 0.60 Ω ID 7.5 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.
  • Wide distance of 4.25 mm between the pins.

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Full PDF Text Transcription

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STFH10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package TO-220FP wide creepage D(2) G(1) S(3) AM15572v1_no_tab Features Order code STFH10N60M2 VDS at TJmax. 650 V RDS(on) max. 0.60 Ω ID 7.5 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected • Wide distance of 4.25 mm between the pins Applications • Switching applications • LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology.
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