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STF7NM80 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.

This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics.

Key Features

  • Order code VDS RDS(on) max. STF7NM80 800 V 1.05 Ω.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance ID 6.5 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF7NM80 Datasheet N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh Power MOSFET in a TO-220FP package 3 2 1 TO-220FP D(2) G(1) S(3) AM01475v1_noZen_noTab Features Order code VDS RDS(on) max. STF7NM80 800 V 1.05 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 6.5 A Applications • Switching applications Description This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics.