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STF7N60M2 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Key Features

  • 3 2 1 TO-220FP Figure 1. Internal schematic diagram , TAB Order code STF7N60M2 VDS @ TJmax 650 V RDS(on) max 0.95 Ω ID 5A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF7N60M2 N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP package Datasheet - production data Features 3 2 1 TO-220FP Figure 1. Internal schematic diagram , TAB Order code STF7N60M2 VDS @ TJmax 650 V RDS(on) max 0.95 Ω ID 5A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.