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STF7N90K5 - N-channel Power MOSFET

General Description

technology based on an innovative proprietary vertical structure.

Key Features

  • Order code VDS RDS(on ) max. ID STF7N90K5 900 V 0.81 Ω 7A 23 1 TO-220FP D(2).
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF7N90K5 Datasheet N-channel 900 V, 0.72 Ω typ., 7 A, MDmesh™ K5 Power MOSFET in a TO-220FP package Features Order code VDS RDS(on ) max. ID STF7N90K5 900 V 0.81 Ω 7A 23 1 TO-220FP D(2) • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a S(3) AM01476v1_No_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.