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STF2N80K5 - N-channel Power MOSFET

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order codes STD2N80K5 STF2N80K5 STP2N80K5 STU2N80K5 VDS 800 V RDS(on)max 4.5 Ω ID 2A PTOT 45 W 20 W 45 W.
  • Industry’s lowest RDS(on).
  • area.
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data TAB 3 1 DPAK TAB 3 2 1 TO-220 3 2 1 TO-220FP TAB IPAK 3 2 1 Figure 1. Internal schematic diagram D(2, TAB) Features Order codes STD2N80K5 STF2N80K5 STP2N80K5 STU2N80K5 VDS 800 V RDS(on)max 4.5 Ω ID 2A PTOT 45 W 20 W 45 W • Industry’s lowest RDS(on) * area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) S(3) AM01476v1 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
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