Datasheet4U Logo Datasheet4U.com

STF2N62K3 - N-channel Power MOSFET

Description

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure.

Features

  • Order code VDS RDS(on)max. STD2N62K3 STF2N62K3 620 V 3.6 Ω STU2N62K3.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected ID 2.2 A Package DPAK TO-220FP IPAK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF201-22 USB Downstream Post Filter & TVS Semtech Corporation
STF201-30 USB Downstream Post Filter & TVS Semtech Corporation
STF202-22 USB Upstream Port Filter & TVS Semtech Corporation
STF202-22 USB Filter ON Semiconductor
STF202-22T1G USB Filter ON Semiconductor

Other Datasheets by STMicroelectronics

Part Number Description
STF2N80K5 N-channel Power MOSFET
STF2N95K5 N-channel Power MOSFET
STF2NK60Z N-channel Power MOSFET
STF20N60M2-EP N-CHANNEL POWER MOSFET
STF20N65M5 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD2N62K3, STF2N62K3, STU2N62K3 Datasheet N-channel 620 V, 2.9 Ω typ., 2.2 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages D(2, TAB) G(1) S(3) AM01475V1 Product status link STD2N62K3 STF2N62K3 STU2N62K3 Features Order code VDS RDS(on)max. STD2N62K3 STF2N62K3 620 V 3.6 Ω STU2N62K3 • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected ID 2.2 A Package DPAK TO-220FP IPAK Applications • Switching applications Description These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure.
Published: |