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STF1N105K3 - N-channel Power MOSFET

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Features

  • Order codes VDS RDS(on) max ID PTOT STF1N105K3 STFW1N105K3 1050 V STP1N105K3 11 Ω 20 W 1.4 A 60 W.
  • Gate charge minimized.
  • Extremely large avalanche performance.
  • 100% avalanche tested.
  • Very low intrinsic capacitance TAB 3 2 1 TO-220FP 1 3 2 1 TO-3PF 3 2 1 TO-220.

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Full PDF Text Transcription

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STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™ Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes VDS RDS(on) max ID PTOT STF1N105K3 STFW1N105K3 1050 V STP1N105K3 11 Ω 20 W 1.4 A 60 W ■ Gate charge minimized ■ Extremely large avalanche performance ■ 100% avalanche tested ■ Very low intrinsic capacitance TAB 3 2 1 TO-220FP 1 3 2 1 TO-3PF 3 2 1 TO-220 Applications ■ Switching applications Figure 1. Internal schematic diagram Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
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