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STF130N10F3 - N-channel Power MOSFET

Description

These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.

Features

  • Order codes STF130N10F3 STFI130N10F3 STH130N10F3-2 STP130N10F3.
  • VDSS RDS(on) max. 9.6 mΩ ID 3 46 A TO-220FP 1 2 1 2 3 100 V 9.3 mΩ 9.6 mΩ I²PAKFP 120 A TAB TAB Ultra low on-resistance 100% avalanche tested 2 1 3 1 2 3 H²PAK-2 TO-220.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3 N-channel 100 V, 7.8 mΩ typ., 120 A STripFET™III Power MOSFET in TO-220FP, I²PAKFP, H²PAK-2 and TO-220 packages Datasheet — production data Features Order codes STF130N10F3 STFI130N10F3 STH130N10F3-2 STP130N10F3 ■ ■ VDSS RDS(on) max. 9.6 mΩ ID 3 46 A TO-220FP 1 2 1 2 3 100 V 9.3 mΩ 9.6 mΩ I²PAKFP 120 A TAB TAB Ultra low on-resistance 100% avalanche tested 2 1 3 1 2 3 H²PAK-2 TO-220 Applications ■ High current switching applications Figure 1.
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