Datasheet Details
| Part number | STF13N60M2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 590.30 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 STF13N60M2 Datasheet
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General Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
Key Features
- 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 STFI13N60M2 650 V 0.38 Ω 11 A.
- Extremely low gate charge.
- Lower RDS(on) x area vs previous generation.
- Low gate input resistance.
- 100% avalanche tested.
- Zener-protected.