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STD96N3LLH6 - N-channel MOSFET

General Description

This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • Type STD96N3LLH6 VDSS 30 V RDS(on) max 0.0042 Ω ID 80 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.

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Full PDF Text Transcription for STD96N3LLH6 (Reference)

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STD96N3LLH6 N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET Features Type STD96N3LLH6 VDSS 30 V RDS(on) max 0.0042 Ω ID 80 A ■ RDS(on) * Qg indus...

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TD96N3LLH6 VDSS 30 V RDS(on) max 0.0042 Ω ID 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications – Automotive Description This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1.

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