Download the STD95NH02L-1 datasheet PDF.
This datasheet also covers the STD95NH02L variant, as both devices belong to the same n-channel stripfet mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
oleThe device is based on the latest generation of sST’s proprietary STripFET™ technology.
An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters.
Key Features
Type
VDSS
RDS(on)
ID
STD95NH02L
)STD95NH02L-1
24V 24V
< 0.005Ω < 0.005Ω
t(s1. Value limited by wire bonding
uc.
Note: The manufacturer provides a single datasheet file (STD95NH02L_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for STD95NH02L-1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
STD95NH02L-1. For precise diagrams, and layout, please refer to the original PDF.
STD95NH02L-1 STD95NH02L N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STD95NH02L )STD95NH02L-1 24...
View more extracted text
Power MOSFET Features Type VDSS RDS(on) ID STD95NH02L )STD95NH02L-1 24V 24V < 0.005Ω < 0.005Ω t(s1. Value limited by wire bonding uc■ Conduction losses reduced d■ Switching losses reduced ro■ Low threshold device 80A(1) 80A(1) te PDescription oleThe device is based on the latest generation of sST’s proprietary STripFET™ technology. An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters. It’s therefore ideal for high-density converters in Telecom and Computer capplications. roduApplication Obsolete P■ Switching applicatio
STD95NH02L-1 Datasheet
