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STD6NM60N-1 - N-channel Power MOSFET

Download the STD6NM60N-1 datasheet PDF. This datasheet also covers the STD6NM60N variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is realized with the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • www. DataSheet4U. com Type VDSS (@Tjmax) 650V 650V 650V 650V RDS(on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD6NM60N_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STD6NM60N N-channel Power MOSFET
STD6N52K3 N-CHANNEL POWER MOSFET
STD6N60M2 N-channel Power MOSFET
STD6N62K3 N-channel Power MOSFET
STD6N65M2 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD6NM60N - STD6NM60N-1 STF6NM60N - STP6NM60N N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.92Ω <0.92Ω <0.92Ω <0.92Ω ID 4.6A 1 3 2 1 3 2 STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N 4.6A 4.6A (1) 4.6A TO-220 TO-220FP 1. Limited only by maximum temperature allowed 1 3 3 2 1 ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK IPAK Description This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.