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STD6N10 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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www.DataSheet4U.com STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD6N10 s s s s s s s s V DSS 100 V R DS( on) < 0.45 Ω ID 6A s s TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 IPAK TO-251 (Suffix ”-1”) 2 1 DPAK TO-252 3 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DataSheet4U.
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