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STD3PS25 - P-CHANNEL MOSFET

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STD3PS25.

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Other Datasheets by STMicroelectronics

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STD3PS25-1 P-CHANNEL MOSFET
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Full PDF Text Transcription

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STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STD3PS25 STD3PS25-1 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A s TYPICAL RDS(on) = 2.1Ω s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION s STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY s GATE-SOURCE ZENER DIODE 3 1 DPAK IPAK 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.
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