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STD3PS25-1 - P-CHANNEL MOSFET

Download the STD3PS25-1 datasheet PDF. This datasheet also covers the STD3PS25 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STD3PS25.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD3PS25-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STD3PS25 P-CHANNEL MOSFET
STD3PK50Z P-CHANNEL MOSFET
STD30N10F7 N-CHANNEL POWER MOSFET
STD30N6LF6AG N-CHANNEL POWER MOSFET
STD30NF03LT N-Channel MOSFET

Full PDF Text Transcription

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STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STD3PS25 STD3PS25-1 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A s TYPICAL RDS(on) = 2.1Ω s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION s STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY s GATE-SOURCE ZENER DIODE 3 1 DPAK IPAK 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.
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