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STB8NS25 - N-CHANNEL MOSFET

General Description

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance.

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N-CHANNEL 250V - 0.38Ω - 8A D2PAK MESH OVERLAY™ MOSFET TYPE STB8NS25 s s s STB8NS25 VDSS 250 V RDS(on) < 0.45 Ω ID 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.