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STB19NF20 - Power MOSFET

Description

This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.

The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Table 1.

Features

  • Type STB19NF20 STD19NF20 STF19NF20 STP19NF20 VDS RDS(on) max. 200 V 200 V 200 V 200 V 0.16 Ω 0.16 Ω 0.16 Ω 0.16 Ω ID 15 A 15 A 15 A 15 A PTOT 90 W 90 W 25 W 90 W 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% .
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitances.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB19NF20, STD19NF20, STF19NF20, STP19NF20 N-channel 200 V, 0.11 Ω typ., 15 A MESH OVERLAY™ Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet — production data TAB 3 1 D²PAK 7$%   DPAK TAB Features Type STB19NF20 STD19NF20 STF19NF20 STP19NF20 VDS RDS(on) max. 200 V 200 V 200 V 200 V 0.16 Ω 0.16 Ω 0.16 Ω 0.16 Ω ID 15 A 15 A 15 A 15 A PTOT 90 W 90 W 25 W 90 W 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitances Applications • Switching application *  6  Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
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