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STB100N10F7 - N-channel Power MOSFET

Datasheet Summary

Description

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order codes VDS RDS(on) max. ID STB100N10F7 80 A STD100N10F7 80 A STF100N10F7 100 V 8.0 mΩ 45 A STI100N10F7 80 A STP100N10F7 80 A.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness Package D2PAK DPAK TO-220FP I2PAK TO-220.

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Datasheet preview – STB100N10F7

Datasheet Details

Part number STB100N10F7
Manufacturer STMicroelectronics
File Size 666.24 KB
Description N-channel Power MOSFET
Datasheet download datasheet STB100N10F7 Datasheet
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STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages TAB 13 D2PAK TAB TAB 23 1 DPAK TAB 123 TO-220FP 123 I2PAK 1 23 TO-220 D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order codes VDS RDS(on) max. ID STB100N10F7 80 A STD100N10F7 80 A STF100N10F7 100 V 8.
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