Datasheet4U Logo Datasheet4U.com

PD55025S-E - RF POWER transistor

Download the PD55025S-E datasheet PDF. This datasheet also covers the PD55025-E variant, as both devices belong to the same rf power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12 V in common source mode at frequencies up to 1 GHz.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V.
  • New RF plastic package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PD55025-E-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

More Datasheets from STMicroelectronics

Part Number Description
PD55025-E RF POWER transistor
PD55003 RF POWER TRANSISTORS
PD55003-E RF POWER transistor
PD55003L-E RF POWER transistor
PD55003S RF POWER TRANSISTORS
PD55008-E RF POWER transistor
PD55008L-E RF POWER transistor
PD55008S-E RF POWER transistor
PD55015-E RF power transistor
PD55015S-E LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The device’s superior linearity performance makes it an ideal solution for car mobile radio.