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PD55015S-E - LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Download the PD55015S-E datasheet PDF. This datasheet also covers the PD55015-E variant, as both devices belong to the same ldmost plastic family n-channel enhancement-mode lateral mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12 V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability Common source configuration POUT = 15W with 14dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PD55015-E_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD55015-E PD55015S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 15W with 14dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead) Description The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.