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LET8180 - RF POWER TRANSISTORS Ldmos Enhanced Technology

Description

The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V.

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Datasheet Details

Part number LET8180
Manufacturer STMicroelectronics
File Size 33.56 KB
Description RF POWER TRANSISTORS Ldmos Enhanced Technology
Datasheet download datasheet LET8180 Datasheet
Additional preview pages of the LET8180 datasheet.

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Full PDF Text Transcription

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LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 220 W with 17 dB TYP. gain @ 860 MHz • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION ORDER CODE LET8180 M252 epoxy sealed BRANDING LET8180 DESCRIPTION The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity. PIN CONNECTION 1 2 3 5 4 1. Drain 2. Drain 3.
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