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LET19060C - RF POWER TRANSISTORS Ldmos Enhanced Technology

Description

The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V.

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Datasheet Details

Part number LET19060C
Manufacturer STMicroelectronics
File Size 34.75 KB
Description RF POWER TRANSISTORS Ldmos Enhanced Technology
Datasheet download datasheet LET19060C Datasheet
Additional preview pages of the LET19060C datasheet.

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LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 % • EDGE PERFORMANCES POUT = 30 W EFF. = 25 % • GSM PERFORMANCES POUT = 65 W EFF. = 45 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT/OUTPUT MATCHING • ESD PROTECTION PIN CONNECTION 1 M265 epoxy sealed ORDER CODE LET19060C BRANDING LET19060C DESCRIPTION The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V.
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