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HD1760JL - Very high voltage NPN power transistor

Description

The HD1760JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Structure 1 (E.H.V.S.1) developed to fit High-Definition CRT display.

Features

  • State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 Wide range of optimum drive conditions Stable performance versus operating temperature variation 3.

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www.DataSheet4U.com HD1760JL Very high voltage NPN power transistor for high definition and slim CRT display Features ■ ■ ■ State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 Wide range of optimum drive conditions Stable performance versus operating temperature variation 3 Applications ■ High-definition and slim CRT TV and monitors 1 2 Description The HD1760JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Structure 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. TO-264 Internal schematic diagram Table 1.
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