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HD1750JL - Very high voltage NPN power transistor

Description

The HD1750JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Stricture 1 (E.H.V.S.1) developed to fit High-Definition CRT display.

Features

  • State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 Wider range of optimum drive conditions Less sensitive to operating temperature variation In compliance with the 2002/93/EC European directive TO-264 2 3 1.

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www.DataSheet4U.com HD1750JL Very high voltage NPN power transistor for high definition and slim CRT display PRELIMINARY DATA Features ■ ■ ■ ■ State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 Wider range of optimum drive conditions Less sensitive to operating temperature variation In compliance with the 2002/93/EC European directive TO-264 2 3 1 Description The HD1750JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Stricture 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
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