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GB20V60DF - IGBT

Product Overview

STMicroelectronics

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GB20V60DF IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – GB20V60DF

Datasheet Details

Part number	GB20V60DF
Manufacturer	STMicroelectronics
File Size	2.01 MB
Description	IGBT
Datasheet	GB20V60DF Datasheet
Additional preview pages of the GB20V60DF datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
Very high speed switching series.
Tail-less switching off.
Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance.
Very fast soft recovery antiparallel diode.
Lead free package.

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