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GB20NC60V - very fast IGBT

General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Table 1.

Key Features

  • High frequency operation up to 50 kHz.
  • Lower CRES / CIES ratio (no cross-conduction susceptibility).
  • High current capability.

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Other Datasheets by STMicroelectronics

Part Number Description
GB20V60DF IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGB20NC60V, STGP20NC60V, STGW20NC60V 30 A - 600 V - very fast IGBT 3 2 1 TO-247 3 1 D²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Datasheet - production data Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capability Applications • High frequency inverters • UPS, motor drivers • HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Order codes STGB20NC60V STGP20NC60V STGW20NC60V Table 1.