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BUZ11 BUZ11 FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
BUZ11 BUZ11 FI
Voss
50 V 50 V
RoS(on)
0.040 0.040
10 -
30 A 20 A
• HIGH SPEED SWITCHING • VERY LOW ON-LOSSES • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE/Crss RATIO
INDUSTRIAL APPLICATIONS: • AUTOMATIVE POWER ACTUATORS
N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching circuits in applications such as power actuator driving, motor drive including brushless motors, hydraulic actuators and many other uses in automotive applications. They also find use in DC/DC converters and uninterruptible power supplies.