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BULD118D-1 - NPN Transistor

Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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Full PDF Text Transcription

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® BULD118D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
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