Datasheet4U Logo Datasheet4U.com

BULD1101ET4 - High voltage fast-switching NPN Power Transistor

Download the BULD1101ET4 datasheet PDF. This datasheet also covers the BULD1101E variant, as both devices belong to the same high voltage fast-switching npn power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.

Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.
  • In compliance with the 2002/93/EC European Directive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BULD1101E_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BULD125KC NPN Transistor Power Innovations Limited
BULD125KC NPN Transistor TRSYS
BULD25 NPN Transistor Power Innovations Limited
BULD25D NPN Transistor Power Innovations Limited
BULD25DR NPN Transistor Power Innovations Limited

Other Datasheets by STMicroelectronics

Part Number Description
BULD1101E High voltage fast-switching NPN Power Transistor
BULD116D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BULD118 NPN Transistor
BULD118D-1 NPN Transistor
BULD741 High voltage fast-switching NPN power transistor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com BULD1101E High voltage fast-switching NPN Power Transistor General features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ In compliance with the 2002/93/EC European Directive Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
Published: |