8DN6LF6 - N-channel Power MOSFET

Description

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6).
AEC-Q101 qualified.
Very low on-resistance.
Very low gate charge.
High avalanche ruggedness.
Low gate drive power loss.
Logic level G1(2) G2(4).

STMicroelectronics

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Datasheet Details

Part number	8DN6LF6
Manufacturer	STMicroelectronics
File Size	311.06 KB
Description	N-channel Power MOSFET
Datasheet	8DN6LF6 Datasheet
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STS8DN6LF6AG Datasheet Automotive-grade dual N-channel 60 V, 21 mΩ typ., 8 A STripFET F6 Power MOSFET in a SO-8 package 5 8 Features Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6) • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level G1(2) G2(4) Applications • Switching applications PTOT 3.2 W S1(1) S2(3) SC12820 Description This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Published: Sep 28, 2023 |