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8DN6LF3 - Automotive-grade dual N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using STripFET F3 technology.

It is designed to minimize on-resistance and gate charge to provide superior switching performance.

Features

  • Order code STL8DN6LF3 VDS 60 V RDS(on) max. 30 mΩ ID 7.8 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5.
  • AEC-Q101 qualified.
  • Logic level VGS(th).
  • 175 °C maximum junction temperature.
  • 100% avalanche rated.
  • Wettable flank package.

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Datasheet Details

Part number 8DN6LF3
Manufacturer STMicroelectronics
File Size 667.49 KB
Description Automotive-grade dual N-channel Power MOSFET
Datasheet download datasheet 8DN6LF3 Datasheet
Additional preview pages of the 8DN6LF3 datasheet.

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Full PDF Text Transcription

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STL8DN6LF3 Datasheet Automotive-grade dual N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 double island package Features Order code STL8DN6LF3 VDS 60 V RDS(on) max. 30 mΩ ID 7.8 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5 • AEC-Q101 qualified • Logic level VGS(th) • 175 °C maximum junction temperature • 100% avalanche rated • Wettable flank package Applications • Switching applications Description This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
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