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2STR1160 - Low voltage fast-switching NPN power transistor

Description

high current density) technology.

NPNB1C3E2 performances coupled with very low saturation voltage.

The complementary PNP is the 2STR2160.

Features

  • 3 2 1 SOT-23.
  • Very low collector-emitter saturation voltage.
  • High current gain characteristic.
  • Fast switching speed.
  • Miniature SOT-23 plastic package for surface mounting circuits.

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2STR1160 Datasheet Low voltage fast-switching NPN power transistor Features 3 2 1 SOT-23 • Very low collector-emitter saturation voltage • High current gain characteristic • Fast switching speed • Miniature SOT-23 plastic package for surface mounting circuits Applications C (3) B (1) • Led • Battery charger • Motor and relay driver • Voltage regulation Description The device in a NPN transistor manufactured using new “PB-HCD” (power bipolar E (2) high current density) technology. The resulting transistor shows exceptional high gain NPNB1C3E2 performances coupled with very low saturation voltage. The complementary PNP is the 2STR2160.
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