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2STR2230 - Low voltage fast-switching PNP power transistor

Description

The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Features

  • Very low collector-emitter saturation voltage.
  • High current gain characteristic.
  • Fast switching speed.
  • Miniature SOT-23 plastic package for surface mounting circuits.

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2STR2230 Low voltage fast-switching PNP power transistor Datasheet - production data Figure 1: Internal schematic diagram Features  Very low collector-emitter saturation voltage  High current gain characteristic  Fast switching speed  Miniature SOT-23 plastic package for surface mounting circuits Applications  LED  Motherboard & hard disk drive  Mobile equipment  Battery charger  Voltage regulation Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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