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2STF2280 - Low voltage high performance PNP power transistor

Description

Figure 1.

The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Features

  • Low collector-emitter saturation voltage High current gain characteristic Fast switching speed 4 3 2 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2STF2280 Low voltage high performance PNP power transistor Preliminary data Features ■ ■ ■ Low collector-emitter saturation voltage High current gain characteristic Fast switching speed 4 3 2 1 Applications ■ ■ DC-DC converter, voltage regulation General purpose switching equipment SOT-89 Description Figure 1. The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Internal schematic diagram www.DataSheet4U.com Table 1. Device summary Marking 2280 Package SOT-89 Packaging Tape and reel Order code 2STF2280 January 2010 Doc ID 16984 Rev 1 1/7 www.st.
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